schottky barrier diode rb751g-40 ? applications ? dimensions (unit : mm) ? land size figure (unit : mm) general rectification ? features 1) small power mold type.(vmd2) 2) low v f 3) high reliability ? construction silicon epitaxial planar ? structure ? taping specifications (unit : mm) ? absolute maximum ratings (ta=25c) symbol unit v rm v v r v io ma i fsm ma tj c tstg c ? electrical characteristics (ta=25c) symbol min. typ. max. unit conditions v f - - 0.37 v i f =1ma reverse current i r - - 0.5 av r =30v ct - 2 - pf v r =1v , f=1mhz parameter forward voltage capacitance between terminals storage temperature ? 40 to ? 125 forward current surge peak (60hz ? 1cyc) 200 junction temperature 125 reverse voltage (dc) 30 average rectified forward current 30 parameter limits reverse voltage (repetitive peak) 40 vmd2 0.5 1.2 0.5 rohm : vmd2 dot (year week factory) 0.130.03 0.50.05 0.270.03 0.60.05 1.00.05 1.40.05 0.760.1 40.1 40.1 20.05 1.5+0.1 0 3.50.05 1.750.1 8.00.3 0.1 0.180.05 0.650.05 0.5 0.4 20.05 0.3 1.110.05 2.10.1 1/3 2011.05 - rev.b data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved.
rb751g-40 0 5 10 15 20 25 30 ave:11.7ns ta=25 if=0.5a ir=1a irr=0.25*ir n=10pcs 1 10 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 ta=125 ta=75 ta=25 ta=-25 forward voltagevf(mv) vf-if characteristics forward current:if(ma) reverse current:ir(na) reverse voltagevr(v) vr-ir characteristics capacitance between terminals:ct(pf) reverse voltage:vr(v) vr-ct characteristics vf dispersion map forward voltage:vf(mv) reverse current:ir(na) ir dispersion map capacitance between terminals:ct(pf) ct dispersion map ifsm disresion map peak surge forward current:ifsm(a) peak surge forward current:ifsm(a) number of cycles ifsm-cycle characteristics peak surge forward current:ifsm(a) time:t(ms) ifsm-t characteristics time:t(s) rth-t characteristics transient thaermal impedance:rth (/w) forward power dissipation:pf(w) average rectified forward currentio(a) io-pf characteristics trr dispersion map reverse recovery time:trr(ns) 0.001 0.01 0.1 1 10 100 0 100 200 300 400 500 600 700 800 ta=-25 ta=125 ta=75 ta=25 0.1 1 10 0 5 10 15 20 25 30 f=1mhz 280 290 300 310 320 330 0 100 200 300 400 500 600 700 800 900 1000 0 1 2 3 4 5 6 7 8 9 10 ave:1.81pf ta=25 f=1mhz vr=0v n=10pcs 0 5 10 15 20 ave:3.40a 8.3ms ifsm 1cyc 0 2 4 6 8 10 1 10 100 0 2 4 6 8 10 0.1 1 10 100 t ifsm 0 0.01 0.02 0.03 0.04 0.05 0 0.010.020.030.040.05 10 100 1000 0.001 0.1 10 1000 rth(j-a) rth(j-c) ave:304.2mv ta=25 if=1ma n=30pcs ta=25 vr=30v n=30pcs ave:111.0na 8.3ms ifsm 1cyc 8.3ms 1ms im=1ma if=10ma 300us time mounted on epoxy board dc d=1/2 sin(?180) 2/3 2011.05 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
rb751g-40 reverse power dissipation:p r (w) reverse voltage:vr(v) vr-p r characteristics ambient temperature:ta() derating curve?(io-ta) average rectifide forward current:io(a) average rectified forward current:io(a) case temparature:tc() derating curve?(io-tc) 0 0.001 0.002 0.003 0 10203040 0 0.02 0.04 0.06 0.08 0.1 0 25 50 75 100 125 0 0.02 0.04 0.06 0.08 0.1 0 25 50 75 100 125 sin(?180) dc d=1/2 sin(?180) dc d=1/2 sin(?180) dc d=1/2 t tj=125 d=t/t t vr io vr=20v 0a 0v t tj=125 d=t/t t vr io vr=20v 0a 0v 3/3 2011.05 - rev.b www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
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